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SSM6P35FE

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SSM6P35FE Image

The SSM6P35FE from Toshiba is a MOSFET with Continous Drain Current -0.1 A, Drain Source Resistance 4300 to 4400 Milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -10 to 10 V, Gate Source Threshold Voltage -0.4 to -1 V. Tags: Surface Mount. More details for SSM6P35FE can be seen below.

Product Specifications

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Product Details

  • Part Number
    SSM6P35FE
  • Manufacturer
    Toshiba
  • Description
    -20 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -0.1 A
  • Drain Source Resistance
    4300 to 4400 Milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -10 to 10 V
  • Gate Source Threshold Voltage
    -0.4 to -1 V
  • Power Dissipation
    0.15 W
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    ES6
  • Applications
    High-Speed Switching Applications, Analog Switching Applications

Technical Documents
View details on the manufacturer's website
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