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SSM6P56FE

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SSM6P56FE Image

The SSM6P56FE from Toshiba is a MOSFET with Continous Drain Current -0.8 A, Drain Source Resistance 310 to 4000 Milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage -1 to -0.3 V. Tags: Surface Mount. More details for SSM6P56FE can be seen below.

Product Specifications

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Product Details

  • Part Number
    SSM6P56FE
  • Manufacturer
    Toshiba
  • Description
    -20 V, 1.6 nC, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -0.8 A
  • Drain Source Resistance
    310 to 4000 Milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    -1 to -0.3 V
  • Gate Charge
    1.6 nC
  • Power Dissipation
    0.25 W
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-563
  • Applications
    Power Management Switches

Technical Documents
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