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SiDR220EP

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SiDR220EP Image

The SiDR220EP from Vishay is a MOSFET with Continous Drain Current 415 A, Drain Source Resistance 0.48 to 0.82 Milliohm, Drain Source Breakdown Voltage 25 V, Gate Source Voltage -16 to 16 V, Gate Source Threshold Voltage 1 to 2.1 V. Tags: Surface Mount. More details for SiDR220EP can be seen below.

Product Specifications

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Product Details

  • Part Number
    SiDR220EP
  • Manufacturer
    Vishay
  • Description
    -16 to 16 V, 150 W, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    415 A
  • Drain Source Resistance
    0.48 to 0.82 Milliohm
  • Drain Source Breakdown Voltage
    25 V
  • Gate Source Voltage
    -16 to 16 V
  • Gate Source Threshold Voltage
    1 to 2.1 V
  • Gate Charge
    61 to 134 nC
  • Power Dissipation
    150 W
  • Temperature operating range
    -55 to 175 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerPAK SO-8DC
  • Applications
    Synchronous rectification, High power density DC/DC, Synchronous buck converter, OR-ing, Load switching, Battery management

Technical Documents
View details on the manufacturer's website
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