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TJ15S10M3

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TJ15S10M3 Image

The TJ15S10M3 from Toshiba is a MOSFET with Continous Drain Current -15 A, Drain Source Resistance 100 to 130 Milliohm, Drain Source Breakdown Voltage -100 V, Gate Source Voltage -20 to 10 V, Gate Source Threshold Voltage -4 to -2 V. Tags: Surface Mount. More details for TJ15S10M3 can be seen below.

Product Specifications

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Product Details

  • Part Number
    TJ15S10M3
  • Manufacturer
    Toshiba
  • Description
    -100 V, 69 nC, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -15 A
  • Drain Source Resistance
    100 to 130 Milliohm
  • Drain Source Breakdown Voltage
    -100 V
  • Gate Source Voltage
    -20 to 10 V
  • Gate Source Threshold Voltage
    -4 to -2 V
  • Gate Charge
    69 nC
  • Power Dissipation
    75 W
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DPAK
  • Applications
    Automotive, Motor Drivers, DC-DC Converters

Technical Documents
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