TJ60S06M3L

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The TJ60S06M3L from Toshiba is a MOSFET with Continous Drain Current -60 A, Drain Source Resistance 9.6 to 14.5 Milliohm, Drain Source Breakdown Voltage -60 V, Gate Source Voltage -20 to 10 V, Gate Source Threshold Voltage -3 to -2 V. Tags: Surface Mount. More details for TJ60S06M3L can be seen below.

Product Specifications

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Product Details

Part Number
TJ60S06M3L
Manufacturer
Toshiba
Description
-60 V, 156 nC, P-Channel Enhancement Mode MOSFET

General

Types of MOSFET

P-Channel Enhancement Mode
Transistor Polarity

P-Channel
Number of Channels

Single
Continous Drain Current

-60 A
Drain Source Resistance

9.6 to 14.5 Milliohm
Drain Source Breakdown Voltage

-60 V
Gate Source Voltage

-20 to 10 V
Gate Source Threshold Voltage

-3 to -2 V
Gate Charge

156 nC
Power Dissipation

100 W
Qualification

AEC-Q101
RoHS Compliant

Yes
Package Type

Surface Mount
Package

DPAK
Applications

Automotive, Motor Drivers, DC-DC Converters, Switching Voltage Regulators