The TK042N65Z5 from Toshiba is an N-Channel Silicon MOSFET that is ideal for switching voltage regulator applications. It has a drain-source breakdown voltage of over 650 V, a gate threshold voltage of 4.5 V, and a drain-source on-resistance of 35 milli-ohms. This MOSFET has a continuous drain current of up to 55 A and a pulsed drain current of less than 220 A. It has a power dissipation of 360 W. This Si MOSFET has a fast reverse recovery time and high-speed switching properties with lower capacitance. It is available in a through-hole package that measures 41.02 x 15.94 mm.
