The TK055U60Z1 from Toshiba is an N-Channel Enhancement Mode Power MOSFET that is ideal for switching voltage regulators and power supply applications. It has a drain-source breakdown voltage of over 600 V, a gate threshold voltage of up to 4 V, and a drain-source on-resistance of less than 55 milli-ohms. This power MOSFET has a continuous drain current of up to 40 A and power dissipation of less than 270 W. It offers high-speed switching properties with lower capacitance and on-state resistance. This RoHS-compliant MOSFET is available in a surface-mount package that measures 9.9 x 11.68 x 2.3 mm.