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TK100E06N1

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The TK100E06N1 from Toshiba is a MOSFET with Continous Drain Current 263 A, Drain Source Resistance 1.9 to 2.3 Milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for TK100E06N1 can be seen below.

Product Specifications

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Product Details

  • Part Number
    TK100E06N1
  • Manufacturer
    Toshiba
  • Description
    60 V, 140 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    263 A
  • Drain Source Resistance
    1.9 to 2.3 Milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    140 nC
  • Power Dissipation
    255 W
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220
  • Applications
    Switching Voltage Regulators

Technical Documents
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