TK110E10PL

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The TK110E10PL from Toshiba is a MOSFET with Continous Drain Current 64 A, Drain Source Resistance 9 to 16 Milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.5 to 2.5 V. Tags: Through Hole. More details for TK110E10PL can be seen below.

Product Specifications

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Product Details

Part Number
TK110E10PL
Manufacturer
Toshiba
Description
100 V, 33 nC, N-Channel Enhancement Mode MOSFET

General

Types of MOSFET

N-Channel Enhancement Mode
Transistor Polarity

N-Channel
Number of Channels

Single
Continous Drain Current

64 A
Drain Source Resistance

9 to 16 Milliohm
Drain Source Breakdown Voltage

100 V
Gate Source Voltage

-20 to 20 V
Gate Source Threshold Voltage

1.5 to 2.5 V
Gate Charge

33 nC
Power Dissipation

87 W
RoHS Compliant

Yes
Package Type

Through Hole
Package

TO-220
Applications

High-Efficiency DC-DC Converters, Switching Voltage Regulators, Motor Drivers