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SiB457EDK

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SiB457EDK Image

The SiB457EDK from Vishay is a MOSFET with Continous Drain Current 9 A, Drain Source Resistance 29 to 157 Milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage -1 to -0.4 V. Tags: Surface Mount. More details for SiB457EDK can be seen below.

Product Specifications

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Product Details

  • Part Number
    SiB457EDK
  • Manufacturer
    Vishay
  • Description
    -8 to 8 V, 13 W, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    9 A
  • Drain Source Resistance
    29 to 157 Milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    -1 to -0.4 V
  • Gate Charge
    13 to 22 nC
  • Power Dissipation
    13 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerPAK SC-75
  • Applications
    Load Switch for Portable Devices, Load Switch for Charging Circuits

Technical Documents
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