1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Toshiba
  6. TK13E25D

TK13E25D

Download Datasheet Request Quote

Note : Your request will be directed to Toshiba.

TK13E25D Image

The TK13E25D from Toshiba is a MOSFET with Continous Drain Current 13 A, Drain Source Resistance 190 to 250 Milliohm, Drain Source Breakdown Voltage 250 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.5 to 3.5 V. Tags: Through Hole. More details for TK13E25D can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    TK13E25D
  • Manufacturer
    Toshiba
  • Description
    250 V, 25 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    13 A
  • Drain Source Resistance
    190 to 250 Milliohm
  • Drain Source Breakdown Voltage
    250 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.5 to 3.5 V
  • Gate Charge
    25 nC
  • Power Dissipation
    102 W
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220
  • Applications
    Switching Voltage Regulators

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products