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TK2R4E08QM

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TK2R4E08QM Image

The TK2R4E08QM from Toshiba is a MOSFET with Continous Drain Current 120 A, Drain Source Resistance 1.97 to 3.2 Milliohm, Drain Source Breakdown Voltage 80 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2.5 to 3.5 V. Tags: Through Hole. More details for TK2R4E08QM can be seen below.

Product Specifications

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Product Details

  • Part Number
    TK2R4E08QM
  • Manufacturer
    Toshiba
  • Description
    80 V, 178 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    120 A
  • Drain Source Resistance
    1.97 to 3.2 Milliohm
  • Drain Source Breakdown Voltage
    80 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2.5 to 3.5 V
  • Gate Charge
    178 nC
  • Power Dissipation
    300 W
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220
  • Applications
    High-Efficiency DC-DC Converters, Switching Voltage Regulators, Motor Drivers

Technical Documents
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