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TK30J25D

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The TK30J25D from Toshiba is a MOSFET with Continous Drain Current 30 A, Drain Source Resistance 46 to 60 Milliohm, Drain Source Breakdown Voltage 250 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.5 to 3.5 V. Tags: Through Hole. More details for TK30J25D can be seen below.

Product Specifications

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Product Details

  • Part Number
    TK30J25D
  • Manufacturer
    Toshiba
  • Description
    250 V, 100 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    30 A
  • Drain Source Resistance
    46 to 60 Milliohm
  • Drain Source Breakdown Voltage
    250 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.5 to 3.5 V
  • Gate Charge
    100 nC
  • Power Dissipation
    260 W
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-3P
  • Applications
    Switching Voltage Regulators

Technical Documents
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