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TK3P80E

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TK3P80E Image

The TK3P80E from Toshiba is a MOSFET with Continous Drain Current 3 A, Drain Source Resistance 3900 to 4900 Milliohm, Drain Source Breakdown Voltage 800 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2.5 to 4 V. Tags: Surface Mount. More details for TK3P80E can be seen below.

Product Specifications

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Product Details

  • Part Number
    TK3P80E
  • Manufacturer
    Toshiba
  • Description
    800 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    3 A
  • Drain Source Resistance
    3900 to 4900 Milliohm
  • Drain Source Breakdown Voltage
    800 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2.5 to 4 V
  • Gate Charge
    12 nC
  • Power Dissipation
    80 W
  • Temperature operating range
    150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DPAK
  • Applications
    Switching Voltage Regulators

Technical Documents
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