TK3R2E06PL

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The TK3R2E06PL from Toshiba is a MOSFET with Continous Drain Current 100 A, Drain Source Resistance 2.4 to 4.7 Milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.5 to 2.5 V. Tags: Through Hole. More details for TK3R2E06PL can be seen below.

Product Specifications

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Product Details

Part Number
TK3R2E06PL
Manufacturer
Toshiba
Description
60 V, 71 nC, N-Channel Enhancement Mode MOSFET

General

Types of MOSFET

N-Channel Enhancement Mode
Transistor Polarity

N-Channel
Number of Channels

Single
Continous Drain Current

100 A
Drain Source Resistance

2.4 to 4.7 Milliohm
Drain Source Breakdown Voltage

60 V
Gate Source Voltage

-20 to 20 V
Gate Source Threshold Voltage

1.5 to 2.5 V
Gate Charge

71 nC
Power Dissipation

168 W
RoHS Compliant

Yes
Package Type

Through Hole
Package

TO-220
Applications

High-Efficiency DC-DC Converters, Switching Voltage Regulators, Motor Drivers