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TK4Q60DA

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TK4Q60DA Image

The TK4Q60DA from Toshiba is a MOSFET with Continous Drain Current 3.5 A, Drain Source Resistance 1700 to 2200 Milliohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2.4 to 4.4 V. Tags: Through Hole. More details for TK4Q60DA can be seen below.

Product Specifications

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Product Details

  • Part Number
    TK4Q60DA
  • Manufacturer
    Toshiba
  • Description
    600 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    3.5 A
  • Drain Source Resistance
    1700 to 2200 Milliohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2.4 to 4.4 V
  • Gate Charge
    11 nC
  • Power Dissipation
    80 W
  • Temperature operating range
    150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    New PW-Mold2
  • Applications
    Switching Voltage Regulators

Technical Documents
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