1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Toshiba
  6. TK4R3A06PL

TK4R3A06PL

Download Datasheet Request Quote

Note : Your request will be directed to Toshiba.

TK4R3A06PL Image

The TK4R3A06PL from Toshiba is a MOSFET with Continous Drain Current 68 A, Drain Source Resistance 3.3 to 7.2 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.5 to 2.5 V. Tags: Through Hole. More details for TK4R3A06PL can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    TK4R3A06PL
  • Manufacturer
    Toshiba
  • Description
    60 V, 48.2 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    68 A
  • Drain Source Resistance
    3.3 to 7.2 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.5 to 2.5 V
  • Gate Charge
    48.2 nC
  • Power Dissipation
    36 W
  • Industry
    Aerospace, Industrial, Medical, Military
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220
  • Applications
    High-Efficiency DC-DC Converters, Switching Voltage Regulators, Motor Drivers

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products