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TK8P25DA

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The TK8P25DA from Toshiba is a MOSFET with Continous Drain Current 7.5 A, Drain Source Resistance 41 to 50 milliohm, Drain Source Breakdown Voltage 250 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.5 to 3.5 V. Tags: Surface Mount. More details for TK8P25DA can be seen below.

Product Specifications

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Product Details

  • Part Number
    TK8P25DA
  • Manufacturer
    Toshiba
  • Description
    250 V, 16 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    7.5 A
  • Drain Source Resistance
    41 to 50 milliohm
  • Drain Source Breakdown Voltage
    250 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.5 to 3.5 V
  • Gate Charge
    16 nC
  • Power Dissipation
    55 W
  • Industry
    Industrial, Military, Automotive
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DPAK
  • Applications
    Switching Voltage Regulators

Technical Documents
View details on the manufacturer's website
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