TK8S06K3L

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The TK8S06K3L from Toshiba is a MOSFET with Continous Drain Current 8 A, Drain Source Resistance 43 to 80 Milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 3 V. Tags: Surface Mount. More details for TK8S06K3L can be seen below.

Product Specifications

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Product Details

Part Number
TK8S06K3L
Manufacturer
Toshiba
Description
60 V, 10 nC, N-Channel Enhancement Mode MOSFET

General

Types of MOSFET

N-Channel Enhancement Mode
Transistor Polarity

N-Channel
Number of Channels

Single
Continous Drain Current

8 A
Drain Source Resistance

43 to 80 Milliohm
Drain Source Breakdown Voltage

60 V
Gate Source Voltage

-20 to 20 V
Gate Source Threshold Voltage

2 to 3 V
Gate Charge

10 nC
Power Dissipation

25 W
Qualification

AEC-Q101
RoHS Compliant

Yes
Package Type

Surface Mount
Package

DPAK
Applications

Automotive, Motor Drivers, DC-DC Converters, Switching Voltage Regulators