TPC8125

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The TPC8125 from Toshiba is a MOSFET with Continous Drain Current -10 A, Drain Source Resistance 10 to 17 milliohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -25 to 20 V, Gate Source Threshold Voltage -2 to -0.8 V. Tags: Surface Mount. More details for TPC8125 can be seen below.

Product Specifications

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Product Details

Part Number
TPC8125
Manufacturer
Toshiba
Description
-30 V, 64 nC, P-Channel Enhancement Mode MOSFET

General

Types of MOSFET

P-Channel Enhancement Mode
Technology

Silicon
Transistor Polarity

P-Channel
Number of Channels

Single
Continous Drain Current

-10 A
Drain Source Resistance

10 to 17 milliohm
Drain Source Breakdown Voltage

-30 V
Gate Source Voltage

-25 to 20 V
Gate Source Threshold Voltage

-2 to -0.8 V
Gate Charge

64 nC
Power Dissipation

1.9 W
Industry

Industrial, Military, Automotive
RoHS Compliant

Yes
Package Type

Surface Mount
Package

SOP-8
Applications

Lithium Ion Battery Applications, Power Management Switch Applications