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TPH1R712MD

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The TPH1R712MD from Toshiba is a MOSFET with Continous Drain Current -60 A, Drain Source Resistance 1.35 to 2.7 milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage -1.2 to -0.5 V. Tags: Surface Mount. More details for TPH1R712MD can be seen below.

Product Specifications

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Product Details

  • Part Number
    TPH1R712MD
  • Manufacturer
    Toshiba
  • Description
    -20 V, 182 nC, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -60 A
  • Drain Source Resistance
    1.35 to 2.7 milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    -1.2 to -0.5 V
  • Gate Charge
    182 nC
  • Power Dissipation
    78 W
  • Industry
    Industrial, Military, Automotive
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOP Advance
  • Applications
    Lithium-Ion Secondary Batteries, Power Management Switches

Technical Documents
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