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TPH4R50ANH1

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TPH4R50ANH1 Image

The TPH4R50ANH1 from Toshiba is a MOSFET with Continous Drain Current 138 A, Drain Source Resistance 3.7 to 4.5 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for TPH4R50ANH1 can be seen below.

Product Specifications

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Product Details

  • Part Number
    TPH4R50ANH1
  • Manufacturer
    Toshiba
  • Description
    100 V, 58 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    138 A
  • Drain Source Resistance
    3.7 to 4.5 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    58 nC
  • Power Dissipation
    170 W
  • Industry
    Industrial, Military, Automotive
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOP Advance
  • Applications
    High-Efficiency DC-DC Converters, Switching Voltage Regulators, Motor Drivers

Technical Documents
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