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TPH6R30ANL

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TPH6R30ANL Image

The TPH6R30ANL from Toshiba is a MOSFET with Continous Drain Current 66 A, Drain Source Resistance 5.1 to 10.3 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.5 to 2.5 V. Tags: Surface Mount. More details for TPH6R30ANL can be seen below.

Product Specifications

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Product Details

  • Part Number
    TPH6R30ANL
  • Manufacturer
    Toshiba
  • Description
    100 V, 55 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    66 A
  • Drain Source Resistance
    5.1 to 10.3 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.5 to 2.5 V
  • Gate Charge
    55 nC
  • Power Dissipation
    54 W
  • Industry
    Industrial, Military, Automotive
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOP Advance
  • Applications
    High-Efficiency DC-DC Converters, Switching Voltage Regulators, Motor Drivers

Technical Documents
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