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TPN1110ENH

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TPN1110ENH Image

The TPN1110ENH from Toshiba is a MOSFET with Continous Drain Current 13 A, Drain Source Resistance 96 to 114 milliohm, Drain Source Breakdown Voltage 200 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for TPN1110ENH can be seen below.

Product Specifications

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Product Details

  • Part Number
    TPN1110ENH
  • Manufacturer
    Toshiba
  • Description
    200 V, 7 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    13 A
  • Drain Source Resistance
    96 to 114 milliohm
  • Drain Source Breakdown Voltage
    200 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    7 nC
  • Power Dissipation
    39 W
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TSON Advance
  • Applications
    High-Efficiency DC-DC Converters, Switching Voltage Regulators

Technical Documents
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