1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Toshiba
  6. TPN14006NH

TPN14006NH

Download Datasheet Request Quote

Note : Your request will be directed to Toshiba.

TPN14006NH Image

The TPN14006NH from Toshiba is a MOSFET with Continous Drain Current 33 A, Drain Source Resistance 11 to 41 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for TPN14006NH can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    TPN14006NH
  • Manufacturer
    Toshiba
  • Description
    60 V, 15 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    33 A
  • Drain Source Resistance
    11 to 41 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    15 nC
  • Power Dissipation
    30 W
  • Industry
    Commercial, Industrial, Automotive
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TSON Advance
  • Applications
    DC-DC Converters, Switching Voltage Regulators, Motor Drivers

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products