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TPN4R303NL

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TPN4R303NL Image

The TPN4R303NL from Toshiba is a MOSFET with Continous Drain Current 63 A, Drain Source Resistance 3.6 to 6.3 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.3 to 2.3 V. Tags: Surface Mount. More details for TPN4R303NL can be seen below.

Product Specifications

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Product Details

  • Part Number
    TPN4R303NL
  • Manufacturer
    Toshiba
  • Description
    30 V, 14.8 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    63 A
  • Drain Source Resistance
    3.6 to 6.3 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.3 to 2.3 V
  • Gate Charge
    14.8 nC
  • Power Dissipation
    34 W
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TSON Advance
  • Applications
    High-Efficiency DC-DC Converters, Switching Voltage Regulators

Technical Documents
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