The TW015N120C from Toshiba is an N-Channel Enhancement Mode SiC MOSFET that is ideal for switching voltage regulator applications. It has a drain-source breakdown voltage of over 1200 V, a gate threshold voltage of up to 5 V, and a drain-source on-resistance of less than 20 mΩ. This power MOSFET has a continuous drain current of up to 100 A and power dissipation of less than 431 W. It is based on Toshiba’s 3rd generation chip design that consists of a built-in SiC-based Schottky barrier diode with a low forward voltage. This MOSFET has a high threshold voltage to ensure less susceptibility to malfunction or over-voltage-related damages. It is available in a through-hole package that measures 15.94 x 41.02 mm.