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XK1R9F10QB

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XK1R9F10QB Image

The XK1R9F10QB from Toshiba is a MOSFET with Continous Drain Current 160 A, Drain Source Resistance 1.6 to 3.31 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2.5 to 3.5 V. Tags: Surface Mount. More details for XK1R9F10QB can be seen below.

Product Specifications

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Product Details

  • Part Number
    XK1R9F10QB
  • Manufacturer
    Toshiba
  • Description
    100 V, 184 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    160 A
  • Drain Source Resistance
    1.6 to 3.31 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2.5 to 3.5 V
  • Gate Charge
    184 nC
  • Power Dissipation
    375 W
  • Industry
    Industrial, Military, Automotive
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO-220SM
  • Applications
    Automotive, Motor Drivers, DC-DC Converters, Switching Voltage Regulators

Technical Documents
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