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XPH3R114MC

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XPH3R114MC Image

The XPH3R114MC from Toshiba is a MOSFET with Continous Drain Current -100 A, Drain Source Resistance 2.4 to 4.7 milliohm, Drain Source Breakdown Voltage -40 V, Gate Source Voltage -20 to 10 V, Gate Source Threshold Voltage -2.1 to -1 V. Tags: Surface Mount. More details for XPH3R114MC can be seen below.

Product Specifications

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Product Details

  • Part Number
    XPH3R114MC
  • Manufacturer
    Toshiba
  • Description
    -40 V, 230 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -100 A
  • Drain Source Resistance
    2.4 to 4.7 milliohm
  • Drain Source Breakdown Voltage
    -40 V
  • Gate Source Voltage
    -20 to 10 V
  • Gate Source Threshold Voltage
    -2.1 to -1 V
  • Gate Charge
    230 nC
  • Power Dissipation
    170 W
  • Industry
    Industrial, Military, Automotive
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOP Advance
  • Applications
    Automotive, Motor Drivers, DC-DC Converters, Switching Voltage Regulators

Technical Documents
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