XPJR6604PB,LXHQ

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XPJR6604PB,LXHQ Image

The XPJR6604PB,LXHQ from Toshiba is an Automotive Qualified N-Channel Enhancement Mode MOSFET that is ideal for switching voltage regulators, motor drivers, automotive, and DC-DC converter applications. It has a drain-source breakdown voltage of over 40 V, a gate threshold voltage of less than 3 V, and a drain-source on-resistance of 0.75 milli-ohms. This AEC-Q101-qualified MOSFET has a continuous drain current of up to 200 A and a power dissipation of less than 375 W. It offers a leakage current of less than 10 µA at 40 V (drain-source voltage). This RoHS-compliant MOSFET is available in a surface-mount package that measures 7.00 x 8.44 x 2.3 mm.

Product Specifications

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Product Details

  • Part Number
    XPJR6604PB,LXHQ
  • Manufacturer
    Toshiba
  • Description
    Automotive Qualified N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Dimensions
    7.00 x 8.44 x 2.3 mm
  • Number of Channels
    Single
  • Continous Drain Current
    200 A
  • Drain Source Resistance
    0.75 milli-ohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    3 V
  • Gate Charge
    128 nC
  • Power Dissipation
    375 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Automotive
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Applications
    Automotive, Switching Voltage Regulators, Motor Drivers, DC-DC Converters

Technical Documents

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