The XPJR6604PB,LXHQ from Toshiba is an Automotive Qualified N-Channel Enhancement Mode MOSFET that is ideal for switching voltage regulators, motor drivers, automotive, and DC-DC converter applications. It has a drain-source breakdown voltage of over 40 V, a gate threshold voltage of less than 3 V, and a drain-source on-resistance of 0.75 milli-ohms. This AEC-Q101-qualified MOSFET has a continuous drain current of up to 200 A and a power dissipation of less than 375 W. It offers a leakage current of less than 10 µA at 40 V (drain-source voltage). This RoHS-compliant MOSFET is available in a surface-mount package that measures 7.00 x 8.44 x 2.3 mm.
