XPN12006NC

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The XPN12006NC from Toshiba is a MOSFET with Continous Drain Current 20 A, Drain Source Resistance 9.8 to 23.7 Milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.5 to 2.5 V. Tags: Surface Mount. More details for XPN12006NC can be seen below.

Product Specifications

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Product Details

Part Number
XPN12006NC
Manufacturer
Toshiba
Description
60 V, 23 nC, N-Channel Enhancement Mode MOSFET

General

Types of MOSFET

N-Channel Enhancement Mode
Transistor Polarity

N-Channel
Number of Channels

Single
Continous Drain Current

20 A
Drain Source Resistance

9.8 to 23.7 Milliohm
Drain Source Breakdown Voltage

60 V
Gate Source Voltage

-20 to 20 V
Gate Source Threshold Voltage

1.5 to 2.5 V
Gate Charge

23 nC
Power Dissipation

65 W
Qualification

AEC-Q101
RoHS Compliant

Yes
Package Type

Surface Mount
Package

TSON Advance
Applications

Automotive, Motor Drivers, DC-DC Converters, Switching Voltage Regulators