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2N6661

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2N6661 Image

The 2N6661 from TT Electronics is a MOSFET with Continous Drain Current 0.9 A, Drain Source Resistance 5300 to 7500 milliohm, Drain Source Breakdown Voltage 90 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 0.3 to 2 V. Tags: Through Hole. More details for 2N6661 can be seen below.

Product Specifications

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Product Details

  • Part Number
    2N6661
  • Manufacturer
    TT Electronics
  • Description
    90 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    0.9 A
  • Drain Source Resistance
    5300 to 7500 milliohm
  • Drain Source Breakdown Voltage
    90 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    0.3 to 2 V
  • Power Dissipation
    0.725 to 5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Space, Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-39
  • Applications
    Various Aerospace and Space

Technical Documents
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