The BS250CSM4 from TT Electronics is a P–Channel Enhancement Mode MOSFET that has been designed for high-reliability applications. It has a drain-source breakdown voltage of over 45 V, a gate threshold voltage of up to 3.5 V, and a drain-source on-resistance of less than 14 ohms. This MOSFET has a continuous drain current of up to 0.15 A and a power dissipation of less than 0.83 W. It is available in a ceramic surface-mount package that measures 5.59 x 3.81 x 1.4 mm.
