BS250CSM4

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The BS250CSM4 from TT Electronics is a P–Channel Enhancement Mode MOSFET that has been designed for high-reliability applications. It has a drain-source breakdown voltage of over 45 V, a gate threshold voltage of up to 3.5 V, and a drain-source on-resistance of less than 14 ohms. This MOSFET has a continuous drain current of up to 0.15 A and a power dissipation of less than 0.83 W. It is available in a ceramic surface-mount package that measures 5.59 x 3.81 x 1.4 mm.

Product Specifications

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Product Details

  • Part Number
    BS250CSM4
  • Manufacturer
    TT Electronics
  • Description
    45 V P–Channel Enhancement Mode MOSFET for High-Reliability Applications

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Dimensions
    5.59 x 3.81 x 1.4 mm
  • Number of Channels
    Single
  • Continous Drain Current
    0.15 A
  • Drain Source Resistance
    14 ohm
  • Drain Source Breakdown Voltage
    45 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    3.5 V
  • Power Dissipation
    0.83 W
  • Temperature operating range
    150 Degree C
  • Industry
    Space, Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    LCC3
  • Applications
    Various Aerospace and Space

Technical Documents

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