The IRF150 from TT Electronics is an N-Channel Enhancement Power MOSFET. It has a drain-source breakdown voltage of over 100 V, a gate threshold voltage of up to 4 V, and a drain-source on-resistance of less than 55 milli-ohms. This MOSFET has a continuous drain current of up to 38 A and a power dissipation of less than 150 W. It consumes low gate drive power due to its simple gate drive requirements and maintains a high degree of robustness and reliability with a hermetically sealed package design. This MOSFET is available in a through-hole package that measures 39.95 x 19.94 mm.
