1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. UN Semiconductor
  6. UN0302P9R0-T52

UN0302P9R0-T52

Download Datasheet Request Quote

Note : Your request will be directed to UN Semiconductor.

The UN0302P9R0-T52 from UN Semiconductor is a MOSFET with Continous Drain Current -29 A, Drain Source Resistance 9.0 to 18.0 milli-ohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -25 to 25 V, Gate Source Threshold Voltage -1 to -2.0 V. Tags: Surface Mount. More details for UN0302P9R0-T52 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    UN0302P9R0-T52
  • Manufacturer
    UN Semiconductor
  • Description
    -30 V, -29 A, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -29 A
  • Drain Source Resistance
    9.0 to 18.0 milli-ohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -25 to 25 V
  • Gate Source Threshold Voltage
    -1 to -2.0 V
  • Gate Charge
    43.2 nC
  • Switching Speed
    6.8 to 72.1 ns
  • Power Dissipation
    20 to 50 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial, Automotive
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO-252
  • Applications
    Power Management in Load Switch, Motor control and drive, Lithium battery protection, General Purpose
  • Note
    Input Capacitance :- 3524 pF

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products