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UN0412N2R0-PD56

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The UN0412N2R0-PD56 from UN Semiconductor is a MOSFET with Continous Drain Current 125 A, Drain Source Resistance 2.0 to 3.2 milli-ohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage -12 to 20 V, Gate Source Threshold Voltage 2 to 4.0 V. Tags: Surface Mount. More details for UN0412N2R0-PD56 can be seen below.

Product Specifications

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Product Details

  • Part Number
    UN0412N2R0-PD56
  • Manufacturer
    UN Semiconductor
  • Description
    40 V, 125 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    125 A
  • Drain Source Resistance
    2.0 to 3.2 milli-ohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    -12 to 20 V
  • Gate Source Threshold Voltage
    2 to 4.0 V
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PDFN5*6-8L
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