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UN0603N011-PD56

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The UN0603N011-PD56 from UN Semiconductor is a MOSFET with Continous Drain Current 39 A, Drain Source Resistance 11.0 to 17.0 milli-ohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.4 to 2.2 V. Tags: Surface Mount. More details for UN0603N011-PD56 can be seen below.

Product Specifications

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Product Details

  • Part Number
    UN0603N011-PD56
  • Manufacturer
    UN Semiconductor
  • Description
    60 V, 39 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    39 A
  • Drain Source Resistance
    11.0 to 17.0 milli-ohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.4 to 2.2 V
  • Gate Charge
    8.1 to 16.8 nC
  • Switching Speed
    3.5 to 27.8 ns
  • Power Dissipation
    39 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PDFN5*6-8L
  • Applications
    High efficiency power supply, Synchronous Rectification
  • Note
    Input Capacitance :- 1018 pF

Technical Documents
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