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UN15N10-T52

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The UN15N10-T52 from UN Semiconductor is a MOSFET with Continous Drain Current 16.1 A, Drain Source Resistance 80 to 100 milli-ohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 3.0 V. Tags: Surface Mount. More details for UN15N10-T52 can be seen below.

Product Specifications

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Product Details

  • Part Number
    UN15N10-T52
  • Manufacturer
    UN Semiconductor
  • Description
    100 V, 16.1 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    16.1 A
  • Drain Source Resistance
    80 to 100 milli-ohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 3.0 V
  • Gate Charge
    15.5 nC
  • Switching Speed
    2.5 to 30.7 ns
  • Power Dissipation
    26.7 to 41.7 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO-252
  • Applications
    Power Management, Synchronous Rectification, Load Switch
  • Note
    Input Capacitance :- 314 pF

Technical Documents
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