The UN302N23T from UN Semiconductor is a MOSFET with Continous Drain Current 4 A, Drain Source Resistance 32 to 48 milli-ohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.6 to 1.3 V. Tags: Surface Mount. More details for UN302N23T can be seen below.