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UN302N23T

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The UN302N23T from UN Semiconductor is a MOSFET with Continous Drain Current 4 A, Drain Source Resistance 32 to 48 milli-ohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.6 to 1.3 V. Tags: Surface Mount. More details for UN302N23T can be seen below.

Product Specifications

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Product Details

  • Part Number
    UN302N23T
  • Manufacturer
    UN Semiconductor
  • Description
    30 V, 4 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    4 A
  • Drain Source Resistance
    32 to 48 milli-ohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    0.6 to 1.3 V
  • Gate Charge
    4.4 nC
  • Switching Speed
    4.6 to 34 ns
  • Power Dissipation
    1.25 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23
  • Applications
    Load Switch for Portable Devices, Voltage Controlled Small Signal Switch
  • Note
    Input Capacitance :- 389 pF

Technical Documents
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