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QA3118M6N

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The QA3118M6N from uPI Semiconductor is a MOSFET with Continous Drain Current 13 to 115 A, Drain Source Resistance 4.0 to 7.4 milli-ohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -12 to 20 V, Gate Source Threshold Voltage 1.2 to 2.5 V. Tags: Surface Mount. More details for QA3118M6N can be seen below.

Product Specifications

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Product Details

  • Part Number
    QA3118M6N
  • Manufacturer
    uPI Semiconductor
  • Description
    30 V, 13 to 115 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    13 to 115 A
  • Drain Source Resistance
    4.0 to 7.4 milli-ohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -12 to 20 V
  • Gate Source Threshold Voltage
    1.2 to 2.5 V
  • Gate Charge
    14.5 nC
  • Switching Speed
    6.2 to 43.3 ns
  • Power Dissipation
    37 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PRPAK-5x6
  • Note
    Input Capacitance :- 861 pF

Technical Documents
View details on the manufacturer's website
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