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QM2401D

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The QM2401D from uPI Semiconductor is a MOSFET with Continous Drain Current -4.2 to -18.4 A, Drain Source Resistance 42 to 85 milli-ohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage -0.5 to -1.2 V. Tags: Surface Mount. More details for QM2401D can be seen below.

Product Specifications

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Product Details

  • Part Number
    QM2401D
  • Manufacturer
    uPI Semiconductor
  • Description
    -20 V, -4.2 to -18.4 A, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -4.2 to -18.4 A
  • Drain Source Resistance
    42 to 85 milli-ohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    -0.5 to -1.2 V
  • Gate Charge
    11.1 to 15.5 nC
  • Switching Speed
    5.2 to 58 ns
  • Power Dissipation
    25 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO252
  • Note
    Input Capacitance :- 1200 pF

Technical Documents
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