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QM2538N3

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The QM2538N3 from uPI Semiconductor is a MOSFET with Continous Drain Current 10 to 56 A, Drain Source Resistance 2.3 to 8.0 milli-ohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage 0.5 to 1 V. Tags: Surface Mount. More details for QM2538N3 can be seen below.

Product Specifications

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Product Details

  • Part Number
    QM2538N3
  • Manufacturer
    uPI Semiconductor
  • Description
    20 V, 10 to 56 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    10 to 56 A
  • Drain Source Resistance
    2.3 to 8.0 milli-ohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    0.5 to 1 V
  • Gate Charge
    41.1 nC
  • Switching Speed
    8.3 to 406.7 ns
  • Power Dissipation
    31 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN3x3
  • Applications
    Battery MOSFET Switch
  • Note
    Input Capacitance :- 2571 pF

Technical Documents
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