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QM3009K

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The QM3009K from uPI Semiconductor is a MOSFET with Continous Drain Current -1.8 to -2.6 A, Drain Source Resistance 110 to 230 milli-ohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -1.0 to -2.5 V. Tags: Surface Mount. More details for QM3009K can be seen below.

Product Specifications

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Product Details

  • Part Number
    QM3009K
  • Manufacturer
    uPI Semiconductor
  • Description
    -30 V, -1.8 to -2.6 A, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -1.8 to -2.6 A
  • Drain Source Resistance
    110 to 230 milli-ohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -1.0 to -2.5 V
  • Gate Charge
    2.6 nC
  • Switching Speed
    1.5 to 25 ns
  • Power Dissipation
    1.32 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT23
  • Applications
    Load Switch, General switching purpose
  • Note
    Input Capacitance :- 203 pF

Technical Documents
View details on the manufacturer's website
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