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QN1002RAE

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The QN1002RAE from uPI Semiconductor is a MOSFET with Continous Drain Current 26 A, Drain Source Resistance 1.85 to 6.65 milli-ohm, Drain Source Breakdown Voltage 12 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage 0.4 to 1.2 V. Tags: Surface Mount. More details for QN1002RAE can be seen below.

Product Specifications

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Product Details

  • Part Number
    QN1002RAE
  • Manufacturer
    uPI Semiconductor
  • Description
    12 V, 26 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    26 A
  • Drain Source Resistance
    1.85 to 6.65 milli-ohm
  • Drain Source Breakdown Voltage
    12 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    0.4 to 1.2 V
  • Gate Charge
    53.7 nC
  • Switching Speed
    378 to 1809 ns
  • Power Dissipation
    3.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    WLCSP
  • Applications
    Lithium-ion battery charging and discharging switch
  • Note
    Input Capacitance :- 4844 pF

Technical Documents
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