1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. uPI Semiconductor
  6. QN3120M3N

QN3120M3N

Download Datasheet Request Quote

Note : Your request will be directed to uPI Semiconductor.

The QN3120M3N from uPI Semiconductor is a MOSFET with Continous Drain Current 16 to 104 A, Drain Source Resistance 2.4 to 4.3 milli-ohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.2 to 2.5 V. Tags: Surface Mount. More details for QN3120M3N can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    QN3120M3N
  • Manufacturer
    uPI Semiconductor
  • Description
    30 V, 16 to 104 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    16 to 104 A
  • Drain Source Resistance
    2.4 to 4.3 milli-ohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.2 to 2.5 V
  • Gate Charge
    27.7 nC
  • Switching Speed
    10.1 to 30.9 ns
  • Power Dissipation
    50 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PRPAK3X3
  • Applications
    High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA, Networking DC-DC Power System, Load Switch
  • Note
    Input Capacitance :- 1798 pF

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products