IRF614S

Note : Your request will be directed to Vishay.

IRF614S Image

The IRF614S from Vishay is a MOSFET with Continous Drain Current 1.7 to 2.7 A, Drain Source Resistance 2 milliohm, Drain Source Breakdown Voltage 250 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for IRF614S can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    IRF614S
  • Manufacturer
    Vishay
  • Description
    20 V, Single, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    1.7 to 2.7 A
  • Drain Source Resistance
    2 milliohm
  • Drain Source Breakdown Voltage
    250 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    8.2 nC
  • Power Dissipation
    36 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    D2PAK, TO-263

Technical Documents

Latest MOSFETs

View more products