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IRF710

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IRF710 Image

The IRF710 from Vishay is a MOSFET with Continous Drain Current 2 A, Drain Source Resistance 3600 milliohm, Drain Source Breakdown Voltage 400 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for IRF710 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IRF710
  • Manufacturer
    Vishay
  • Description
    -20 to 20 V, 36 W, N-Channel Enhancement Mode, MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    2 A
  • Drain Source Resistance
    3600 milliohm
  • Drain Source Breakdown Voltage
    400 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    17 nC
  • Power Dissipation
    36 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220AB

Technical Documents
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