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IRF820S

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IRF820S Image

The IRF820S from Vishay is a MOSFET with Continous Drain Current 2.5 A, Drain Source Resistance 3000 milliohm, Drain Source Breakdown Voltage 500 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole, Surface Mount. More details for IRF820S can be seen below.

Product Specifications

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Product Details

  • Part Number
    IRF820S
  • Manufacturer
    Vishay
  • Description
    -20 to 20 V, 50 W, N-Channel Enhancement Mode, MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    2.5 A
  • Drain Source Resistance
    3000 milliohm
  • Drain Source Breakdown Voltage
    500 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    24 nC
  • Power Dissipation
    50 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole, Surface Mount
  • Package
    D2PAK (TO-263)I2PAK(TO-262)

Technical Documents
View details on the manufacturer's website
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