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SISS52DN

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The SISS52DN from Vishay is a MOSFET with Continous Drain Current 37.7 to 162 A, Drain Source Resistance 0.95 to 1.9 milli-ohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -12 to 16 V, Gate Source Threshold Voltage 1 to 2.2 V. Tags: Surface Mount. More details for SISS52DN can be seen below.

Product Specifications

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Product Details

  • Part Number
    SISS52DN
  • Manufacturer
    Vishay
  • Description
    30 V N-channel Enhancement MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Dimensions
    3.30 x 3.30 x 0.75 mm
  • Continous Drain Current
    37.7 to 162 A
  • Drain Source Resistance
    0.95 to 1.9 milli-ohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -12 to 16 V
  • Gate Source Threshold Voltage
    1 to 2.2 V
  • Gate Charge
    19.9 to 65 nC
  • Power Dissipation
    3 to 57 W
  • Temperature operating range
    -55 to 150 ºCC
  • Industry
    Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Applications
    DC-DC Converter, load switches, Battery Switch

Technical Documents
View details on the manufacturer's website
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