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IRFPE50

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IRFPE50 Image

The IRFPE50 from Vishay is a MOSFET with Continous Drain Current 7.8 A, Drain Source Resistance 1200 milliohm, Drain Source Breakdown Voltage 800 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for IRFPE50 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IRFPE50
  • Manufacturer
    Vishay
  • Description
    800 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    7.8 A
  • Drain Source Resistance
    1200 milliohm
  • Drain Source Breakdown Voltage
    800 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    200 nC
  • Power Dissipation
    190 W
  • Temperature operating range
    -55 to 150 ºC
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-247AC

Technical Documents
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